APT60DF20HJ APT60DF20HJ ? rev 0 november, 2009 www.microsemi.com 1-4 absolute maximum ratings symbol parameter max ratings unit v r maximum dc reverse voltage v rrm maximum peak repetitive reverse voltage 200 v t c = 25c 90 i f(av) maximum average forward current duty cycle = 50% t c = 80c 60 i fsm non-repetitive forward surge current 8.3ms t j = 45c 500 a these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com v rrm = 200v i f = 60a @ tc = 80c application ? switch mode power supplies rectifier ? induction heating ? welding equipment ? high speed rectifiers features ? ultra fast recovery times ? soft recovery characteristics ? high blocking voltage ? high current ? low leakage current ? very low stray inductance ? high level of integration ? isotop ? package (sot-227) benefits ? outstanding performance at high frequency operation ? low losses ? low noise switching ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? rohs compliant isotop ? fast diode full bridge power module ~ ~ - +
APT60DF20HJ APT60DF20HJ ? rev 0 november, 2009 www.microsemi.com 2-4 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i f = 60a 1.1 1.15 i f = 120a 1.4 v f diode forward voltage i f = 60a t j = 125c 0.9 v t j = 25c 250 i rm maximum reverse leakage current v r = 200v t j = 125c 500 a c t junction capacitance v r = 200v 210 pf dynamic characteristics symbol characteristic test conditions min typ max unit t j = 25c 31 t rr reverse recovery time t j = 125c 60 ns t j = 25c 60 q rr reverse recovery charge t j = 125c 250 nc t j = 25c 3 i rrm reverse recovery current i f = 60a v r = 133v di/dt = 200a/s t j = 125c 7 a t rr reverse recovery time 40 ns q rr reverse recovery charge 540 nc i rrm reverse recovery current i f = 60a v r = 133v di/dt=1000a/s t j = 125c 24 a thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance 0.9 r thja junction to ambient 20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -55 150 t l max lead temp for soldering:0.063? from case for 10 sec 300 c torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g
APT60DF20HJ APT60DF20HJ ? rev 0 november, 2009 www.microsemi.com 3-4 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration t j =25c t j =125c 0 20 40 60 80 100 120 0.0 0.3 0.5 0.8 1.0 1.3 1.5 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage i rrm vs. current rate of charge 30 a 60 a 120 a 0 5 10 15 20 25 0 200 400 600 800 1000 1200 -dif/dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =133v trr vs. current rate of charge 30 a 60 a 120 a 20 30 40 50 60 70 80 0 200 400 600 800 1000 1200 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =133v q rr vs. current rate charge 30 a 60 a 120 a 100 200 300 400 500 600 0 200 400 600 800 1000 1200 -dif/dt (a/s) q rr , reverse recovery charge (nc) t j =125c v r =133v capacitance vs. reverse voltage 0 200 400 600 800 1000 1200 1400 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf)
APT60DF20HJ APT60DF20HJ ? rev 0 november, 2009 www.microsemi.com 4-4 sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) 3.30 (.130) 4.57 (.180) isotop? is a registered trademark of st microelectronics nv microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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